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Silicon nanowire (SNW) field effect transistors (FET) which consist of silicon nanowire channels with less than 10 nm diameters and gate-all-around structures are targeted as future CMOS devices. This paper presents the atomic-scale understanding of epitaxial NiSi2 growth and discusses its contribution to silicidation of SNWs.
This paper demonstrates the integration of Al segregated NiSi/p+-Si S/D contact junction in p-FinFETs for parasitic series resistance reduction. Al is introduced by ion implant into p+ S/D region followed by nickel deposition and silicidation. Drive current enhancement of ~15 % is achieved without any degradation of short channel effects. This is attributed to the lowering of PhiBp of NiSi on p-Si...
This letter demonstrates successful integration of Gate-All-Around (GAA) nanowire (NW) transistors with low-resistivity metallic NW point contacts at source/drain extensions. Ultrascaled GAA silicon NW transistors with gate lengths down to 8 nm have been achieved, exhibiting good performance among the NW FETs reported to date. Compared to the reference devices, the metallic contact NW devices show...
This paper investigates the work function adjustment of Ni-FUSI metal gate by implanting Yb into poly-Si gate before silicidation. It is obvious that implanting Yb into poly-Si before silicidation can modulate the work function of Ni-FUSI metal gate efficiently and increasing dose can extend the range of work function modulation. The ability of work function modulation by Yb implanting is excellent...
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