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This paper presents a 2.1/3.9 GHz oscillator based on switching the negative resistance bandwidth of a capacitively degenerated common collector stage, while using a high order resonance tank. Multi-band oscillators have traditionally been implemented by reconfiguring the oscillator tank. In this paper, we employ a fixed high order resonator, and move the bandswitching mechanism from the tank to the...
A variable gain differential transimpedance amplifier (TIA) optimized for MEMS-based oscillator applications is presented. The TIA achieves a variable gain of 17 kOmega to 290 kOmega, i.e. a gain range of 25 dB. The 3-dB bandwidths corresponding to these gains are 256 MHz and 103 MHz, respectively. The suitability of the TIA for the targeted application is demonstrated by combining it with a MEMS...
A CMOS LC oscillator based on the mutual negative resistance (mu-R) with a top-biasing current source is presented. It offers superior phase noise over the traditional top-biased cross-coupled oscillator due to the indirect mutual coupling that results in a suppression of the LC resonator loading by the amplifier transistors. The top-biased mu-R structure also enables a low power quadrature oscillator...
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