The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
<?Pub Dtl?>A series of limiters have been developed for power levels up to 58 dBm in a standard 0.25- BiCMOS process. After a thorough analysis of general design tradeoffs, a figure-of-merit (FOM) for limiter technologies is introduced. This FOM indicates the necessity of a high current-to-capacitance ratio, which is obtained by exploiting the base-collector junction. Two designs...
This contribution highlights how the active device on resistance (RON) can play a significant role in the achievable performances from a Doherty Power Amplifier (DPA). Benefits as well as limitations are stressed comparing two DPAs (DPA1 and DPA2) for X-band applications. Both of them have been realized in the same monolithic technology based on GaAs PHEMT 0.4um power process provided by Selex-SI...
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 20 GHz estimated...
This paper reports on practical study of a switchable dual-frequency oscillator for 60-GHz binary FSK modulation, using a 0.15 mum commercial GaAs p-HEMT technology. The oscillator obtained an output power of 1.8 dBm at 61.43 GHz with a phase noise of -65dBc/Hz at 100 kHz offset and -87dBc/Hz at 1MHz offset to the carrier at the free-run state. A 500 Mbit/s FSK modulation was confirmed with the developed...
Fabrication and oscillation characteristics of sub-THz RTD oscillators integrated with planar horn antennas for horizontal radiation are reported. The device consists of a GaInAs/AlAs RTD, a resonator, a waveguide, and a horn antenna on a semi-insulating InP substrate. Oscillation frequency of 455 GHz and horizontal output power of ~0.6 muW were observed. The output power is small at present because...
GaInNAs-VCSELs with buried tunnel junction structures are proposed and demonstrated. The maximum output powers of 4.2 mW at 25degC and 2.2 mW at 85degC are achieved with a low resistance of 65 Omega.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.