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In e-beam physical vapour deposition (PVD) system 70 and 110 nm thick aluminium films are deposited on epi-polished fused silica and sapphire substrates. We compare average values of four surface morphology parameters: peak-to-peak height, average roughness, root mean square (RMS) roughness and grain size diameter measured on Al films fabricated in three temperatures 170, 297 and 450 K. Variable surface...
Films of iridium oxide were deposited by the dipping method from a 0.005M Iridium chloride solution in iso-propanol and post-annealed at different temperatures (350, 450 and 550 °C). After three dippings, very thin films, with effective thickness less than 10 nm were obtained. Their effective refractive index at 632.8 nm wavelength changed from 2.495 up to 2.727. X-ray diffraction measurements proved...
We report the deposition and characterization of thin ZnO films on 〈100〉 silicon substrates employing Atomic layer deposition (ALD). This technique is considered to have a great potential for nano-scale applications due to its excellent conformality, total surface coverage, uniformity, accurate thickness control, its ability to deposit high k-dielectrics, metals, nucleation layers and barrier materials,...
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