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17-μm Al-foil/n-4H-SiC Schottky junctions with the foils as contacts are fabricated in order to investigate the impacts of annealing on their electrical characteristics. By measuring their current-voltage and capacitance-voltage characteristics, the ideality factor and Schottky barrier height (SBH) are estimated to be 1.31 and 1.37 eV for junctions after annealing at 673 K, respectively.
The possibility of the surface-activated bonding (SAB) technologies for fabricating III-V-on-Si hybrid tandem solar cells is discussed. Although the electrical conduction across the bonding interfaces is influenced by the interface states introduced during the surface-activation process, their impacts are likely to be lowered by combining more heavily-doped bonding layers and the annealing process...
We successfully fabricated Al-foil/p-Si junctions by surface activated bonding (SAB). We found that the junctions revealed Schottky properties by measuring their current-voltage characteristics. We also found that the reverse-bias current of the junctions was decreased, i.e., their electrical characteristics were improved by annealing at temperatures below 200 °C. These results demonstrate that the...
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding...
The electrical properties of GaAs/GaAs junctions fabricated by using surface-activated bonding (SAB) were investigated. We extracted the potential barrier heights at 300-°C-annealed GaAs/GaAs interfaces from their current-voltage characteristics measured at varied ambient temperatures and estimated the energy of charge neutral level ECNL and the density of interface states Dit.
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400 °C. We also investigated the effects of the...
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