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SOI technology is now emerging as a promising one for the integration of RF front-end modules, mainly for antenna switches and power amplifiers (PAs). This paper reviews the performances of STMicroelectronics 0.13 mum High Resistivity (HR) SOI CMOS technology and discusses the potentiallity for SOI technology to capture RF front-end business in the near future.
This paper introduces a low-power ultra-wideband true root-mean-square power detector with a 0.13-mum CMOS process operating from 125 MHz to 8.5 GHz. The detector utilizes the MOS transistor's square-law characteristic in the strong inversion region to obtain the power information of the input RF signal, and its exponential characteristic in the weak inversion region to realize the linear-in-decibel...
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