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This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
In this paper, we report on the possibility of using particle-based Monte Carlo (MC) techniques to incorporate all relevant quantum effects in the simulation of semiconductor nanotransistors. Starting from the conventional MC approach within the semiclassical Boltzmann approximation, we develop a multisubband description of transport to include quantization in ultrathin-body devices. This technique...
The room temperature low field mobility of electrons and holes in silicon inversion layers has been studied to improve the mobility modeling. Samples with gate oxide thicknesses between 10nm and 50nm and surface doping levels of up to 4.5 ?? 1017 cm??3 have been used. Three scattering mechanisms were considered and an accurate mobility model, derived from these, will be presented.
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