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In this paper, a new surface potential based compact model for long channel fully depleted SOI MOSFET with lightly doped ultra-thin body is presented. The 1-D Poisson equation is solved using the appropriate boundary conditions, and a closed-form surface potential solution is proposed for the front and back surface potentials. Finally the model was compared to numerical simulations and a good agreement...
The influence of front contacts deep into the emitter region on the performance of a Si solar cell was calculated on the basis of a 2-D numerical modeling of an n+-p crystalline silicon solar cell. The emitter is n-type doped with a Gaussian profile. The base is p-type uniformly doped. The carrier flow pattern in the solar cell was analyzed by solving the diffusion equations using appropriate boundary...
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