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A 2-D device model of the organic electrochemical transistor is described and validated. Devices with channel length in range 100 nm–10 mm and channel thickness in range 50 nm–$\textsf {5}\mu \text{m}$ are modeled. Steady-state, transient, and AC simulations are presented. Using the realistic values of physical parameters, the results are in good agreement with the experiments. The scaling of transconductance,...
A model for filamentary conduction in RRAMs based on Metal-Insulator-Metal (MIM) structures has been developed. The model describes RRAM resistive switching processes by calculating the formation and rupture of conductive filaments (CFs) in the dielectric. The resistance of the electrodes, of the CF and the hopping current in the gap between the CF tip and the electrode, are taken into consideration...
A spice-friendly model for the planar spreading of current for side-extended OTFTs is proposed in this paper. The semiconducting region extends on the either side of electrodes due to the resolution of organic printers, circular edges of the semiconducting region, nucleation near the corner and the coffee ring effect. Small flexible memory and logic circuits required small drive current. Thus, width...
A new technique to calculate the channel electric field in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFET) in subthreshold region is presented. 2D Poisson's equation is solved in an analytical closed-form with the conformal mapping technique. A comparison with data simulated by 2D TCAD Sentaurus simulator for channel lengths down to 22 nm was made and is in a good agreement to this simulation...
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