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Nanoscale electronic devices have the potential to achieve exquisite sensitivity as sensors for the direct detection of molecular interactions, thereby decreasing diagnostics costs and enabling previously impossible sensing in disparate field environments. Semiconducting nanowire-field effect transistors (NW-FETs) hold particular promise, though contemporary NW approaches are inadequate for realistic...
Silicon nanowires (SiNWs) fabricated by MEMS technology and its DC response to antigen (HBsAg) was demonstrated in this paper. Anisotropic self-stop etching was employed to ensure low cost batch production. Electrical characterization revealed that, field effect of such device, with SiNWs' width and thickness in the order of 10 nm, guaranteed linear resistance modulation in a wide range, which made...
A continuously alternating deposition method capable of producing compact collateral nanowires of single crystalline silicon on a wafer scale is described. By depositing different materials (polysilicon or silicon oxide) which have different etching properties over lithographically defined sidewalls and by selectively removing the sacrificial material, those sidewalls are preserved and can serve as...
In this paper, Si nanowire (NW) sensor in pH detection is presented. The conductance of device is analytically obtained and demonstrated the conductance increases with reducing the oxide thickness. To calculate the electrical conductance of sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are used. To improve the conductance a Si NW sensor with nanoscale side gate voltage...
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