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Three dimensional integrated circuits (3D ICs) have attracted much interest in the recent past, because of their capabilities for more efficient device integration and faster circuit operation. 3D integration relies on through silicon via (TSV) interconnection and interlayer bonding between the silicon layers. Because 3D IC is vertically stacked, higher temperature as well as temperature concentration...
In this paper, changes of thermal conductivity of paraffin mixtures joined different percentages of aluminum, copper, silicon powder were stuPdied. Feasibility of adding these three kinds of powders into paraffin to enhance paraffin's thermal properties was studied, as well as the influence of different addictives on paraffin's phase-change temperature and latent heat. The results showed that adding...
Thermal simulation of a stack consists of three IC layers bonded ??face up?? is performed using finite element modeling. Significant reduction of ~62??C in maximum chip temperature is predicted by inserting an electrically isolated thermal through silicon via (TTSV) having Cu core and oxide liner shell that extends across IC layers to the substrate. The effects of TTSV dimensions and its extension...
ldquoDevelopment for advanced thermoelectric conversion systemsrdquo supported by the new energy and industrial technology development organization (NEDO) has been successfully completed as one of the Japanese national energy conservation projects. Three types of the cascaded thermoelectric modules operating up to 850 K in high electrode temperature and two types of Bi-Te thermoelectric modules operating...
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found...
Cooling is important to keep the temperatures of the highly integrated silicon electronic devices and power devices e.g. power MOSFET, IGBT. Yamaguchi et al. have proposed a new scheme to cool down the devices by its own current named ldquoself-cooling devicerdquo, in which the cooling process uses Peltier effect. In the proposed scheme, we should use the materials that have high thermal conductivity,...
In this study, we fabricated in-plane thermoelectric micro-generators (4 mm times 4 mm) based on bismuth telluride thin films by using flash evaporation method. The thermoelectric properties of as-grown thin films are lower than those of bulk materials. Therefore the as-grown thin films were annealed in hydrogen at atmospheric pressure for 1 hour in a temperature range of 200 degC. to 400degC. By...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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