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For the past years, MEMS-based devices such as Suspended Gate Metal-Oxide-Semiconductor Field-Effect Transistor (SG-MOSFET) and air-gap poly Si Thin-Film Transistors (TFTs) have received considerable attention because of their abrupt switching characteristics which is attractive for solving the non-scalable subthreshold swing (SS) of traditional MOSFETs. Although some simulation results showed that...
A new method is proposed and demonstrated to fabricate planar thin-film transistors and trigated nanowire (NW) devices simultaneously on the same panel. By using an oxide-nitride-oxide stack as the gate dielectric, the NW devices could also serve as nonvolatile Si-oxide-nitride-oxide-Si (SONOS) memory devices. Our results indicate that the combination of trigate and NW channels help to improve the...
A simple method for fabricating poly-Si nanowire (NW) TFT with multiple gates is proposed and characterized. In this structure, NW is formed mainly using both anisotropic and highly selective isotropic plasma etching. It is found that when the size of NW is scaled down, double-gated operation provides more improvement. Furthermore, by utilizing this unique independent double-gated configuration, the...
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
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