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The propensity of HCI and BTI degradation of HfSiON MOSFET on strained SiN-CESL performance booster is meticulously investigated. It is found that HCI and BTI lifetime of HfO based n/p MOSFET devices depend on hydrogen, initial Dit and plasma charging inherently related to the stress type of CESL fabricated with PECVD. In case for tensile CESL, n/p MOSFET devices far exceed reliability targets for...
In this paper, the reliability of the fluorinated hafnium oxide (HfO2) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore...
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