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In this paper, measured RF noise performance of graded-channel metal-oxide-semiconductor (MOS) transistors (GCMOS - also named laterally asymmetric channel transistors) shows impressive reduction in minimum noise figure (NFmin) as compared to classical MOSFET transistors (with the same gate length Lg = 0.5 mum). The reason is proven to be because of the higher noise correlation coefficient (C). GCMOS...
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