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In this brief, RF reliabilities of hot-carrier and Fowler-Nordheim (FN) tunneling stresses on 40-nm PMOSFETs with and without SiGe source/drain (S/D) are studied and compared in detail. The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabilities after both hot-carrier and FN tunneling stresses are deteriorated remarkably by strain-induced...
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