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An innovative, recently introduced, methodology for microwave power amplifier design, is here extended to switching-mode Class-E amplifier operation. Such a technique is based on a complete and accurate electron device (ED) characterization, which is provided by both direct large-signal low-frequency I/V measurements, performed by means of a relatively simple low-cost setup, and a model-based description...
The manuscript details a harmonically-tuned power amplifier design methodology, that is based on the low-frequency experimental characterization of the time-domain I/V waveforms at the device current generator plane jointly with a model-based description of the device capacitances. The proposed approach, allowing to compute in a wide range of frequencies the optimal terminations at the design fundamental...
A new “hybrid” approach to microwave power amplifier design is presented which is based both on experimental large-signal low-frequency I/V load-line characterization and a model-based description of the device capacitances. Such a technique allows to get the same information obtained through nonlinear measurement setups operating at microwave frequencies. Several simulated and experimental data are...
In this paper, an internally-matched GaN HEMT high efficiency amplifier for Space Solar Power Stations/System (SSPS) is presented. The internal matching circuit was designed so that 2nd and 3rd harmonics are tuned to obtain maximum power added efficiency (PAE). PAE of 70% was successfully obtained with 7W output power at 5.8GHz. All matching circuit is in a hermetically sealed package and no external...
The design of CMOS power amplifiers (PAs) is still a challenging task. In this paper, a broadband amplifier for wireless applications in a 90 nm CMOS process is presented. The PA uses class-E topology to exploit its soft-switching property for high efficiency. The differential amplifier is based on a finite DC-feed inductance concept and includes an on-chip output balun. The circuit has been integrated...
Analysis and synthesis of the new Class-E3F2 power amplifier (PA) are presented in this paper. The proposed circuit offers means to alleviate some of the major issues faced by existing Class-EF and Class-EF2 PAs, such as (1) substantial power losses due to parasitic resistance of the large inductor in the Class-EF load network, (2) unpredictable behaviour of practical lumped inductors and capacitors...
This paper reports the design and measurement of a GaN power amplifier whose output loads are optimised at fundamental and 2nd harmonic over a wide bandwidth (20%) in S-Band to reach maximum power added efficiency (PAE). The design methodology is described in the paper. Two power amplifiers have been built. The first one is optimized at fundamental and 2nd harmonic while the other one is only optimised...
A CMOS class-F power amplifier was developed based on the second and third harmonic control output network for WiMAX application. The harmonic control network was implemented on an off-chip PCB. The measured power performance are more than 24.4% with P1dB = 20.2 dBm and Gp = 13.1 dB at a low drain voltage of 1.8 V. The ACPR was below -33 dBc under standard WiMAX modulated signal at 5 dBm input power.
In this contribution, the analysis on high frequency class E design approach is presented. Starting from the classical theory, a numerical analysis is performed to extend class E feasibility at higher frequencies. The design of hybrid class-E amplifier in LDMOS technology for UMTS base-station applications will be presented, in order to validate the theoretical results. The simulated PA reaches an...
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