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In this paper, an experimental investigation of high-frequency Class-E power amplifier with shunt filter for different quality-factor is presented. Using of different loaded quality-factor of output shunt filter allows to extend the operating frequency band and to obtain output signal spectrum with different harmonics suppression level. The present class-E power amplifier with shunt filter delivers...
A high efficient broadband GaN HEMT power amplifier with low-pass match networks is presented for use from 2.7 to 3.7 GHz. A low-pass filter-matching is designed for the output match and input match, which provides optimized fundamental and harmonic impedances. The amplifier delivers 38.3 dBm output power, with a power-added efficiency of 70–74% and a gain of 11–15 dB throughout the band.
A power oscillator based on a class EF2 power amplifier is presented. The class EF2 power amplifier uses a short circuit to the second harmonic across the switch to lower it's voltage stress and delivers a more sinusoidal power waveform than the class E counterpart. The presented circuit was designed in standard ST Microelectronics CMOS 130nm and is able to deliver 20.6dBm RF power from a 2V supply...
This paper shows a Class-E RF power amplifier designed to obtain a flat-top transistor-voltage waveform whose peak value is 81% of the peak value of the voltage of a “Classical” Class-E amplifier.
This paper studies the effect of feedback capacitance on the input matching of a class E switching power amplifier. The on/off switching causes the input to see the feedback capacitance either amplified by the Miller effect or not and therefore, this feature is dependent on the gain of the amplifier. The time-varying feedback appears at the gate as negative input resistance, as a cause of severe second...
The Class-EF power amplifier (PA) introduced recently has a peak switch voltage much lower than the well-known Class-E PA. However, the value of the transistor output capacitance at high frequencies is typically larger than the required Class-EF optimum shunt capacitance. As a result, softswitching operation that minimizes power dissipation during OFF-to-ON transient cannot be achieved at high frequencies...
This paper presents a novel dynamic model of a single switch resonant inverter. Both transient and steady state behavior of main variables are derived using a multi-frequency average modeling method. The analysis of the boundary conditions reveals that, under some approximations, the performance of the generalized averaged model is close to that of the “exact” or topological one. Contrary to other...
Experimental assessments of the modified power-combining Class-E amplifier are described. The technique used to combine the output of individual power amplifiers (PAs) into an unbalanced load without the need for bulky transformers permits the use of small RF chokes useful for the deployment in the EER transmitter. The modified output load network of the PA results in excellent 50 dBc and 46 dBc second...
The design of CMOS power amplifiers (PAs) is still a challenging task. In this paper, a broadband amplifier for wireless applications in a 90 nm CMOS process is presented. The PA uses class-E topology to exploit its soft-switching property for high efficiency. The differential amplifier is based on a finite DC-feed inductance concept and includes an on-chip output balun. The circuit has been integrated...
Analysis and synthesis of the new Class-E3F2 power amplifier (PA) are presented in this paper. The proposed circuit offers means to alleviate some of the major issues faced by existing Class-EF and Class-EF2 PAs, such as (1) substantial power losses due to parasitic resistance of the large inductor in the Class-EF load network, (2) unpredictable behaviour of practical lumped inductors and capacitors...
The generalized mathematical model describing operation of a device in class E operation mode is suggested. The analytical expressions obtained enable one to evaluate power and immitance characteristics in case of arbitrary number of harmonics. This let to analyze operation of power amplifiers and frequency multipliers.
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