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This article presents the design approach, realization and measurement results of a highly efficient double octave wideband power amplifier using a GaN-HEMT bare-die. An iterative approach to obtain the optimum source and load impedances is described. Multiple harmonics are analyzed using harmonic load-pull simulation and a reliable large-signal device model. The design was realized exploiting a transition...
This paper introduces a method for improving the bandwidth of GaN class-F PAs. The key idea behind this broadband class-F PA lies in the bandpass filter (BPF) used at the input matching network of a conventional class-F PA. Harmonic impedance optimization at the input of the FET is performed in order to design the BPF. Theoretical and experimental results verified the proposed method.
The design of CMOS power amplifiers (PAs) is still a challenging task. In this paper, a broadband amplifier for wireless applications in a 90 nm CMOS process is presented. The PA uses class-E topology to exploit its soft-switching property for high efficiency. The differential amplifier is based on a finite DC-feed inductance concept and includes an on-chip output balun. The circuit has been integrated...
We report a 0.5-5 GHz, 2 V class B push-pull power amplifier in a through-wafer via Si/SiGe HBT process. The amplifier utilized a small, low loss, broadband balun and a coupled spiral inductor transformer. Power added efficiencies greater than 40% from 1 GHz to 4 GHz and greater than 30% from 0.5 to 5 GHz have been achieved. Small signal gain of greater than 13 dB and maximum output power of 22 dBm...
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