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Vertical GaN power semiconductors promise higher power with faster switching speeds but the development of this technology has been slowed. This is due to the expense and lack of familiarity with GaN substrates. This paper will detail the functionality of HRL's cutting-edge vertical GaN transistor which is mounted onto a specially made PCB and tested. The testing consists of a static characterization...
This report studies the influence of printed circuit board (PCB) design on voltage overshoot and ringing oscillation in switching operation of gallium nitride gate injection transistor (GaN-GIT) for high-frequency DC-DC converter. The parasitic inductances in the main power loop have been identified based on moment of method (MoM) analysis and frequency characteristics of impedance measured with 2-port...
This paper presents an outphasing class E PA (OEPA) in a 65nm CMOS technology, using a pcb transmission-line based power combiner. The OEPA can provide +20dBm output power from VDD=1.25V at 1.4GHz with 61% drain efficiency (DE) and 58% power added efficiency (PAE). We introduced a technique to rotate and shift power and efficiency contours of the two branch PAs that enables more than 44dB output power...
This paper systematically analyzed and optimized the operation parameters of low current 1T1R RRAM arrays. Considering both thermal and electrical field driven effects, a current and voltage joint verification strategy has been proposed. Highly uniform multilevel resistive switching performances with LRS resistance higher than 100kΩ and HRS resistance higher than 10MΩ were obtained on 130nm CMOS process...
This paper presents a half-bridge driver to fulfill the requirement for interfacing with MEMs sensors. The upper switch of the driver is implemented by a p-type power transistor to make the driver feasible for pulse density modulated input signal. The high-side “ground” reference voltage VSSH is regulated through the proposed charge pump circuit, which harvests the charges flowing into the VSSH node...
In this paper, we propose voltage converter with high efficiency over wide input voltage. This converter is suitable for the solar panel for WSN applications where the only power source is a solar cell that outputs highly variable voltage. The aim is to achieve this by using multiple converter topologies in parallel. Use of such converter has a meaning in renewable resources that in the long term...
Wide-Band-Gap power semiconductors based on SiC and GaN offer some significant advantages compared to Si-devices, in particular higher switching speed and higher operating temperature. These features offer potentially increased power density, which makes the temperature management critical especially for the PCB and components to which the GaN is connected. In this paper, an active gate driver with...
This paper presents a high-voltage (HV) driver for switching a buck converter. The circuit is based on 3-stacked CMOS using gate control circuits to drive maximum current which indicates minimized on-resistance of the HV-driver thus achieving faster switching. The circuit is designed and fabricated using 65 nm CMOS TSMC process technology with a nominal voltage of 2.5 V and with a supply voltage of...
This paper deals with the method of fast and accurate modeling of electric drives. The existing methods of modeling of variable speed electric drives are considered, their strong and weak sides are shown. The proposed method is based on simplified model of the inverter with integration step size snapped to actual changes of the inverter state. Method takes into account dead time and voltage drops...
A multi-mode 3.5–0.5V input, 1.0V output power transformer based on switched-capacitor DC-DC converters is designed to extract 98% of the energy from a 80mF supercapac-itor, to power a periodically active RFID tag. Six converter modes (3 step-up and 3 step-down) are automatically selected depending on the input voltage. The system usage time is maximized by charging the supercapacitor to 3.5V while...
In this paper, a 10-b analog-to-digital converter (referred to as EMADC) for directly monitoring electrical stimulator outputs with voltage from ∼0V up to ∼45V is proposed. A new high voltage (HV) switch for sampling is also proposed. The maximum input voltage for the HV switch is only limited by the drain-to-source breakdown voltages of the HV transistors. The EMADC was implemented in a 0.18μm CMOS...
This paper proposes an approach to detect the open-circuit faults in a five-phase voltage source inverter. The inverter is modulated with space vector PWM. However, the proposed approach is independent of the modulation technique. The open-circuit faults under study are single transistor open-circuit, single inverter switch open-circuit, double-transistors open-circuit, double-switches open-circuit,...
This paper presents an overview of several converter topologies used in practice and also their digital command. A special attention is given to digital control based on microcontroller. We choose this option because we can implement different strategies like fuzzy, neuro-fuzzy and sliding mode. Also, this kind of digital control can be integrated along with the converter into a computer controlled...
By using a trench isolated thick SOI process as base topology various optical and high voltage devices can be designed which are not or hardly possible in pn-junction isolated BCD processes. The trench isolation allows the construction of isolated photodiodes with excellent response even for red and infrared wavelengths. The thick SOI material enables the integration of vertical high voltage devices...
This paper focuses on the problem of driving parallel strings of LEDs while ensuring current equalization between them. This issue is addressed in terms of proposing a small and simple linear topology that can be used on a number of series-associated LEDs, working as a constant current source for each string. Such topology employs a four-component circuit, with low dependence on transistor parameters,...
A monolithic switched-capacitor voltage converter to drive the virtual VSS for low standby power “drowsy” modes is presented. The voltage converter has been fabricated on a 0.13-µm digital CMOS process. Test chip measurements demonstrate current drive capability from 10 µA to 100 µA with power efficiency over 86%. The test chip measurements also demonstrate that the chip level power efficiency of...
In high-κ (HfSiON and HfLaO) metal gate stacks, the traps leading to gate current Ig random telegraph noise (RTN) are found to be effectively passivated by bipolar switching from negative gate bias, where RTN and threshold voltage variation (ΔVT) are reduced significantly or even disappear. The reduction of RTN, ΔVT and Ig in degraded gate dielectrics is modeled by oxygen ion drift from the oxygen...
A high efficient GaN switch-mode amplifier for Gbit data rates is presented. The design uses GaN HEMTs with a gate length of 250 nm. It consists of a dual-gate transistor configuration in the output stage. This allows an increase of supply voltage in order to increase the output power. If an increase of power is not required, device size can be reduced which comes along with a better RF-performance...
Silicon carbide (SiC) bipolar junction transistors (BJT's) are normally-off fast switching devices with very low collector-emitter voltages (UCE), combining the best of properties from unipolar and bipolar technology. They switch fast with turnoffs from semi saturated state without current tails and have the same time extremely low saturated UCE values. SiC SBJT's without bipolar degradation were...
Silicon carbide (SiC) bipolar junction transistors (BJT's) are normally-off fast switching devices with very low collector-emitter voltages (VCE), combining the best of properties from unipolar and bipolar technology. They switch fast with turn-offs from semi saturated state without current tails and have the same time extremely low saturated UCE values. SiC BJT's free from bipolar degradation were...
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