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Stack-transistor structure is often used in RF applications for higher power handling capability and/or isolation. LDMOSFET may provide similar advantages with smaller device area and lower series resistance. The purpose of this work is extracting the RF parameters of a LDMOSFET and design a RF switching circuit with these parameters. The design trade-off between LDMOS and CMOS technologies was discussed...
The paper proposes a novel implementation of a LC oscillator using an active inductor. The advantages of the method are discussed. The simulations prove the performance of the oscillator with an active inductor. The two phase oscillator based on two simulated CMOS inductors structure consists of a balanced differential CMOS circuit with negative intrinsic resistance and was simulated in a 0.18 μm...
A new wideband predictive ldquodouble-pirdquo equivalent-circuit model for on-chip spiral inductors is presented, in which the model parameters are analytically calculated with layout and process parameters. In the model, five major parasitic effects, including skin effect, proximity effect, distributed effect, substrate capacitive loss, and inductive loss, are implemented together. Considering skin...
Design parameters, including transistor width and number of stacked stages, contribute to the efficiency of RF scavenging systems. This leads to a large design space and, as a result, designing optimal RF scavenging circuits for a given performance requirement is a difficult problem. This work presents an analytical model based on the physical design parameters of the power matched Villard voltage...
A high intercept points, cost-effective, and power-efficient switching FET double balanced mixer (DBM) is reported. The Switching FET DBM demonstrated in this work offers input intercept points (IIP3) and conversion loss typically 44 dBm and 8.5 dB respectively with 15 dBm LO power for the frequency band (RF: 900-2150 MHz, LO: 850-1950 MHz, IF: 50-200 MHz). The measured interport isolation is typically...
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