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In this paper, a design of current-mode control switching regulator was presented with loop gain analysis. The analysis was verified by the chip implementation and measurement. A current mirror based current sensor was used to sensing the inductor current information. This chip has been fabricated with a TSMC 2P4M 0.35μm polyside CMOS process. The measurement result verify the buck converter with...
A method of fabricating low-cost chemical sensing platforms is presented. The device utilizes a discrete metal-oxide-semiconductor field-effect transistor to detect ionic concentrations in electrolytes, with particular emphasis to pH. Measured results indicate a chemical sensitivity of 36.5 mV/pH, while the device exhibits low-leakage currents (in picoamperes) and a drift of 9 mV/h. The proposed technique...
This paper reports the development and characterization of a highly integrated polyvalent CMOS stress sensor detecting five linearly independent, temperature compensated components of the six-dimensional stress space. The sensor has a footprint of only 29??29 ??m2. It combines different piezoresistance sensors to detect the three shear stresses, the in-plane normal stress difference, and a sum of...
To minimize charge relaxation during Bias Temperature Instability (BTI) tests, fast current sensing has become the mainstream methodology in recent years and fast source measurement units are now available commercially. In these instruments, the measurement delay and sampling time have to been significant reduced in order to meet the more stringent methodology specification of fast BTI testing. In...
In this paper, a novel adaptive front-end circuit for measuring liquid conductivity is proposed. To deal with the chemically active environment around the sensor electrodes, the dc component of the excitation signal is set to be zero. The proposed system is able to generate a symmetrical excitation signal with a single power supply even when one terminal of the sensor electrode is grounded. The use...
This paper presents two ultra-low-power voltage sensors and a voltage protection, to optimize the charge of the supply capacitor in passive UHF RFID sensors. The state-of-the-art in the field is analyzed and compared with the proposed circuits using a 0.35 mum 2P4M CMOS process. The measured current consumption of the voltage sensors are 70 nA and 0.2 nA at 3.3 V. The voltage protection circuit consumes...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
In deep submicron era, to prevent larger amount of SRAM from more frequently encountered overheating problems and react accordingly for each possible hotspots, multiple ideal run-time temperature sensors must be closely located and response rapidly to secure system reliability while maintaining core frequency. This paper presented a method to extract run-time temperature information from multiple...
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