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The object of our research is to compare PSP and BSIM4 model parameters for MOSFETs before and after hot-carrier stress. The first part is using MBP software to extract the parameters of 65 nm node MOSFETs with and without hot-carriers stress. Then, comparison of MOSFET parameters based on PSP and BSIM4 models is executed. We conclude that the PSP model is more accurate than BSIM4 model.
In this brief, RF reliabilities of hot-carrier and Fowler-Nordheim (FN) tunneling stresses on 40-nm PMOSFETs with and without SiGe source/drain (S/D) are studied and compared in detail. The results show that even the strained device with SiGe S/D has a better RF performance; however, its RF reliabilities after both hot-carrier and FN tunneling stresses are deteriorated remarkably by strain-induced...
As the channel length rapidly shrinks down to the nanoscale regime, a Gate All Around (GAA) MOSFET structure has been considered as a potential candidate for a CMOS device scaling due to its good short-channel-effects (SCEs) immunity. Therefore, in this work we present an analytical model including the hot-carrier induced interface charge effect for undoped GAA MOSFETs. We have studied the hot-carrier...
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