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To realize high performance mixed analog and digital ASICs, a novel CBi-CMOS technology is proposed. This technology, called DIIP (double-implanted and isolated P-well) CBi-CMOS technology, is characterized by a structure with vertical NPN, PNP and CMOS structures on the same chip. In this structure, a vertical PNP transistor and NMOS transistor are fabricated in a P-well, which is isolated from the...
Deep submicrometer CMOS devices having a novel well structure using thin epitaxy over a buried n+ layer, a p-type substrate, and trench isolation are proposed. Good isolation characteristics and high latchup immunity are obtained. The thin epitaxial layer, which is necessary for on-chip high-performance bipolar devices, lowers the voltage tolerance of the parasitic vertical bipolar, and causes a new...
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