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A method of high-performance and simple fully complementary bipolar MOS (FCBiMOS) process integration is proposed that is compatible with a conventional 0.5-μm CMOS and BiCMOS process. This process is based on two key technologies. One is a high-dose boron MeV ion implantation combined with an epitaxial wafer. The other is rapid thermal processing (RTP) for high current gain. It has been confirmed...
To realize high performance mixed analog and digital ASICs, a novel CBi-CMOS technology is proposed. This technology, called DIIP (double-implanted and isolated P-well) CBi-CMOS technology, is characterized by a structure with vertical NPN, PNP and CMOS structures on the same chip. In this structure, a vertical PNP transistor and NMOS transistor are fabricated in a P-well, which is isolated from the...
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