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The strategies for technology integration and design methodologies for embedded memory are discussed as well as testing and yield issues. Some examples of current embedded-memory developments in several representative categories are presented. Owing to rapid progress in Si technology, current high-performance system VLSIs can afford a large embedded memory on chip, which provides wide memory bandwidth,...
An EPROM cell structure is described that uses folded word lines with double Al layers. Cell characteristics are optimized to obtain high-speed access. The data retention reliability and erasability are studied, focused on a 2Al metallization process. The feasibility of the technology has been confirmed by a 1-Mb CMOS EPROM device which shows 16 ns access time and extremely high data retention reliability...
A modular framework is being used for the implementation of process control in VLSI fabrication. The function of process control has been divided into three core modules: the flexible recipe generator, the run by run controller and the real-time controller. These three modules act to divide up the control function on the basis of the time scale of the response and the range of operating space encompassed...
A controllable method is described for the selective or nonselective growth of high-quality Al on Si(100), Si(111) and TiN versus SiO2 by low-pressure chemical vapor deposition (LPCVD) using a dimethylaluminum hydride (DMAH) source. The selectivity deposited Al on Si surface was confirmed to be single-crystal by microregion observation with a scanning μ-RHEED microscope. The authors produced...
Experimental results are presented for a high-performance silicon bipolar transistor structure utilizing a single layer of polysilicon for both the base and emitter contacts. This structure, called STRIPE (self-aligned trench-isolated polysilicon electrodes), provides a 2.0-μm emitter/base polysilicon contact separation. A 0.4-μm emitter width is achieved with conventional 0.8-μm...
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