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An analytical model for linewidth-dependent electromigration lifetime is proposed. Agreement between the model prediction and experimental data is excellent. The application of this model to design rule definition versus linewidth is discussed. As the linewidth of VLSI metallization interconnects continues to scale down, the reliability performance becomes an increasingly important issue. It has been...
A Al/Al stacked multilayered interconnection that can suppress both stress-induced and electromigration failures without barrier metal was developed. Stress-induced failures are almost completely suppressed and electromigration lifetime is improved more than four times. The higher reliability mechanism is explained in terms of graphed results of the microstructure and mechanical properties
Electromigration phenomena associated with vias of multilayered TiW/AlCuSi/TiW metallization were studied. It was found that the resistance change due to stress current of the via chain was different from that of the metal line. The activation energy related to the mean time to failure (MTTF) of the via chain was much larger than that of the metal line. The alloying reaction between Al and TiW dominated...
The electromigration performance of the 1.2-μm-diameter via chain between two levels of an Al line was evaluated. It was found that the electromigration lifetime of the vias decreases owing to the increase in the total compressive stress in the passivation layer, even though the step coverage of Al film in the vias is improved by controlling the slope angle of the via hole to increase the electromigration...
It is argued that the substantial reduction in hillock formation with F (fluorine) incorporation (relative to Cu incorporation) is predominantly due to the reactive nature of the F. The highly electronegative fluorine forms a much stronger chemical bond than aluminum with itself or aluminum with Cu, which acquires its beneficial effects from forming Cu precipitates at grain boundaries. Due to the...
Reliable Al metallization has been performed using a plasma CVD (chemical vapor deposition) technique. In-situ doping of carbon onto an Al film suppresses the growth of Al crystal grains, hillocks and spikes. MTFs (median times to failure) of the films due to electromigration are one order of magnitude greater than that of a pure Al film. The resistivity is reduced by a factor of 3 to 4 when carbon-doped...
SRAM (static random access memory) design and process requirements are used to project technology constraints for the near future. Previous methods for achieving fast SRAMs are reviewed. Trends interfacing the relationship between technology and chip architecture are then examined, including new packaging constraints. The speed limits for SRAMs of increasing density are explored. The increasing importance...
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