The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
New carrier drift mobility data for boron-, phosphorus-, and arsenic-doped Si in a low-energy high-dose implant regime are measured and studied using a continuous anodic oxidation technique/differential Hall effect technique. The data show that, when the doping concentration is >; 1020/cm3, both the hole and electron mobility values are lower than the conventional model predictions, and the electron...
Applicability of SACVD for doping of 3-D structures was assessed on both flat substrates as well as patterned structures focusing on the optimization of dopant profile within the SACVD film. Boron and phosphorous doped ultra-shallow junctions of 6 and 10 nm respectively are obtained with surface concentration in excess of 1E21 at/cc for this intrinsically conformal and damage-free technique.
We report on the degenerate doping of a silicon resonator as a new method for reducing its temperature coefficient of frequency (TCF). This is the first TCF reduction technique reported till date that takes advantage of free charge carrier effects on the elastic constants of silicon. The TCF of silicon bulk acoustic resonators (SiBAR) are reduced from -29 ppm/??C to -1.5 ppm/??C on 5 ??m thick devices...
Polysilicon nanofilms (less than 100 nm in thickness) have been proved in our previous experiments to offer large gauge factor (>30) and stable temperature characteristics. This promotes their applications in piezoresistive sensing devices. In order to improve the resistance matching of sensors after fabrication, it is necessary to perform resistor trimming. The electrical trimming is an effective...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.