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The boron-doped hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited by plasma enhanced chemical vapor deposition (PECVD). The microstructures of boron-doped nc-Si:H films were characterized and analyzed by Raman spectrum and atomic force microscopy(AFM). The thickness of the films was measured by high-resolution profilometer. The resistivity of the films was measured by four-point...
We investigate the electronic properties of nanocrystalline silicon solar cells. It is shown that the material behaves very similarly to crystalline silicon but with mobility and minority carrier lifetimes being significantly lower than in c-Si. Mobility is shown to increase with grain size. Minority carrier lifetime was measured and shown to be inversely proportional to defect density. The recombination...
Polysilicon nanofilms (less than 100 nm in thickness) have been proved in our previous experiments to offer large gauge factor (>30) and stable temperature characteristics. This promotes their applications in piezoresistive sensing devices. In order to improve the resistance matching of sensors after fabrication, it is necessary to perform resistor trimming. The electrical trimming is an effective...
Nanostructuring is one of the effective approaches to lower the thermal conductivity of materials. Nanostructured skutterudite-related compounds CoSb3, Fe0.5Ni0.5Sb3, Fe0.25Ni0.25Co0.5Sb3 and Te-doped CoSb3 were synthesized by a solvothermal route. The bulk materials were prepared by hot pressing or spark plasma sintering from the solvothermally synthesized nanopowders. The thermal conductivity values...
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