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Fabricating shallow p+-n junctions by low energy BF2 implantation, especially using furnace annealing, requires preamorphous implantation of crystalline silicon to eliminate the boron channeling and the suppression of diffusion in heat cycles. A preimplantation technique is presented that uses fluorine to influence the electric characteristics of p-channel MOSFETs. Using heat cycling of 850°C...
Experimental results are reported of the successful formation of ultra-shallow low-reverse-current junctions by arsenic implantation followed by furnace annealing at 450°C. The junction depth and the sheet resistance of the 450°C annealed junctions are 60 nm and 150 Ω/square, respectively. The reverse bias current at -5 V is 1.5×10-7 A/cm2, which is about three...
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