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An analysis of an improved superjunction structure with variation vertical doping profile (VVD-SJ) is presented in this brief. It features a better tradeoff between breakdown voltage (BV) and specific ON-resistance ($R_{\rm on}$ ) than the prior art, due to a higher average doping concentration in columns. A simple 2-D electric field model of the VVD-SJ structure is derived based on charge superposition...
The dependence of the avalanche breakdown voltage on vertically linear doping gradient of the drift region based on Silicon-On-Insulator (SOI) lateral diffuse metal oxide semiconductor (LDMOS) is studied. Vertically linear doping profile (VD) of the LDMOS structure is exhibited to obviously improve safe of operation area (SOA) from the conventional uniform and variable linear doping structure. From...
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