The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We developed a gate driver IC that can power IGBTs of up to 500 amperes for HEVs and EVs. A newly developed Zener clamping circuit effectively suppressed the IGBT spike voltage in short circuit (SC) mode. The silicon-on-insulator (SOI) process was utilized to achieve high temperature operation and high surge protection.
This work proposes high performance of permanent-magnet synchronous motor (PMSM) driver IC integrated with position sensorless scheme and current sensing circuits. The position sensorless scheme is adapted with digital sliding mode observer (SMO) method that has high robust characteristics of motor parameter variations. For current sensing circuits, 10-bit successive approximation (SAR) analog-to-digital...
Silicon carbide (SiC) MOSFETs are about to replace conventional silicon-based power switches. Due to their blocking, thermal, conducting and switching characteristics they represent a better solution for high power and high voltage applications, such as automotive motor drives in hybrid electric vehicle. Operating conditions and advantages of using SiC MOSFET in a typical automotive motor drive application...
The minimum operating voltage (Vmin) of nano-scale LSIs is investigated, focusing on logic gates, SRAM cells, and DRAM sense amplifiers in LSIs. The Vmin that is governed by SRAM cells rapidly increases as devices are miniaturized due to the ever-larger variation of the threshold voltage (VT) of MOSFETs. The Vmin, however, is reduced to the sub-one-volt region by using repair techniques and new MOSFETs...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.