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Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
Recently, thin rare-earth oxide dielectric capping layers between the high-k and metal gate have been used to modulate the threshold voltage (Vt) of MOSFETs [Kirsch et al., 2006]. In Dy2O3-capped high-k based devices, we observe an anomalous PBTI behavior where the Vt decreases during stress. Results suggest that there are two competing mechanisms - diffusion of preexisting positively-charged species...
Decreasing the length of thermoelectric (TE) module legs results in a significant increase in power density, both for cooling applications and electricity generation. However, this reduction also results in a significant increase of mechanical stress in the legs materials. Thus, it is important to implement an effective method to characterize the mechanical properties, such as mechanical spectroscopy,...
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