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A production released complementary-SiGe BiCMOS technology on SOI has been developed for high speed analog and RFIC applications. It features matched SiGe:C PNP and NPN transistors. The PNP shows cutting edge performance metrics with β·VA = 17,000 and near record fT·BVCEO ≥ 195GHz·V for a 5V process while demonstrating best in class linearity on a fully differential amplifier design. A modular process...
A major problem of usual current measurement setup is the severe limitations on the bandwidth due to room temperature electronics. This restricts the practical measurement rate to below 10 Hz and makes impossible to observe the evolution of a quantum state in real time. Here we describe a measurement on a silicon single electron transistor (SET) carried out using a custom CMOS measurement circuit...
This paper introduces a novel current sense amplifier (CSA) in sub-32nm fully depleted (FD) double-gate (DG) silicon-on-insulator (SOI) technology with planar independent self-aligned gates. A new architecture is proposed which takes advantage of the back gate in order to improve circuit properties. Compared to the reference circuit, the new architecture proves to be faster (21% sensing delay decrease),...
Here we report for the first time the non linear characterization and modeling of MOS varactor with a LSNA in bulk and SOI process. The comparison between large signal measurements and Harmonic Balance simulation using an electrical equivalent scheme based on small signal measurements validates the accuracy of the proposed model in this large signal conditions. Nevertheless, the capacitance behaviour...
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