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Scan shift power can be reduced by activating only a subset of scan cells in each shift cycle. In contrast to shift power reduction, the use of only a subset of scan cells to capture responses in a cycle may cause capture violations, thereby leading to fault coverage loss. In order to restore the original fault coverage, new test patterns must be generated, leading to higher test-data volume. In this...
This paper describes the low-power design of a MOS current-mode logarithmic adder. The adder utilizes the Brent-Kung tree structure. The design strategy adopted is very simple and effective. Moreover, it can be utilized also for other types of logarithmic adders. To validate it, several adders were designed in a TSMC CMOS 130 nm technology. Results of simulations indicate that the proposed methodology...
The use of multiple voltage domains in an integrated circuit has been widely utilized with the aim of finding a tradeoff between power saving and performance. Level shifters allow for effective interfacing between voltage domains supplied by different voltage levels. In this paper we present a low power level shifters in the 90 nm technology node capable of converting subthreshold voltage signals...
Due to the importance of power/ground network, lots of researches have been made on it. But they only focused on the minimal area of it. By discussion on the relation among Vdd, performance and power consumption, this paper proposes an optimal algorithm using GA and SLP method where area, performance and power consumption can be simultaneously evaluated. As a result, the power/ground network is designed...
This paper presents a high performance 16times16 bit 2's complement multiplier using MOS current mode logic (MCML). A small library of MCML logic gates consisting of NAND/AND, XOR/XNOR, MUX and full adder are designed and optimized for low power and high-speed operation. Using these gates, a 16 bit MCML signed multiplier is designed and tested for 4 different supply current, in a UMC 0.18 mum CMOS...
Subthreshold region of operation has gained wide research interest for applications requiring Ultra low power consumption and medium frequency of operation. Double gate MOSFETs are proved to be better candidates for subthreshold operation due to their near ideal subthreshold slope and negligible gate capacitance. However it is not yet clear whether symmetric (SDG) or Asymmetric (ADG) DG with options...
Unintentional clock skew caused by variability can result in degraded and unreliable system performance. In this paper, we present a deskewing technique that continuously senses and compensates for unintentional clock skew. It uses an enhanced skew detector block that detects the skew magnitude in addition to the phase. This helps eliminate the need for complex feedback control, thus reducing the...
In many DSP applications (image and voice processing, baseband symbol decoding in high quality communication channels) several dBs of SNR loss can be tolerated without noticeable impact on system level performance. For power optimization in such applications, voltage overscaling can be used to operate the arithmetic circuitry slower than the critical circuit path delay while incurring tolerable SNR...
The implementation of complex functionality in low-power nano-CMOS technologies leads to enhance susceptibility to parametric disturbances (environmental, and operation-dependent). The purpose of this paper is to present recent improvements on a methodology to exploit power-supply voltage and temperature variations in order to produce fault-tolerant structural solutions. First, the proposed methodology...
This paper studies the impact of intra-die random variability on low-power digital circuit designs, specifically, circuit timing failures due to intra-die variability. We identify a new low-Vdd statistical failure mode that is strongly supply-voltage dependent and also introduce a simple yet novel method for quantifying the effects of process variability on digital timing - a delay overlapping stage...
This paper describes a design flow for the circuit-level optimization of a technology. The concurrent exploration of device characteristics and library design choices leads to a more application-optimal technology. We illustrate the design flow by: 1) analyzing the impact of buffer cell design, and 2) by optimizing a 130 nm technology for low operational power.
The power consumption and the matching will be the principal issues at the 32 nm node and below. In this context, Ultra-Thin Body devices are extensively studied for the end-of-roadmap CMOS. In this paper we present the SON technology, leading to the simple fabrication of sustained mono-Si nano-membranes over an empty tunnel, and discuss on the application of this process to build-up electronic devices...
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