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Body bias control is an efficient means of balancing the trade-off between leakage power and performance especially for chips with silicon on thin buried oxide (SOTB), a type of FD-SOI technology. In this work, a method for finding the optimal combination of the supply voltage and body bias voltage to the core and memory is proposed and applied to a real micro-controller chip using SOTB CMOS technology...
In this paper, an analytic tank to wheel model of a light-duty fuel-cell vehicle is presented. This model takes into account all the elements of the vehicle along with their interactions. It is used to optimize the velocity profile of the vehicle in order to minimize the energy consumption per kilometer.
This paper presents a detailed study on the switching process of a MOSFET-snubber-diode (MSD) configuration commonly used in power converters. An analytical model which takes critical parasitic elements and the interactions between gate drive circuit and power circuit into consideration is derived to evaluate the switching characteristics. The influence of parasitic elements and important circuit...
Applicability of a power MOSFET in power conversion applications is determined by peak junction temperature during operation. Power losses and thermal characteristics are required to estimate the junction temperature. In this paper, switching loss of high voltage power MOSFET in hard switching application such as boost power factor correction pre-regulator is discussed. A new simple analytical switching...
In this paper, we present analytical expressions for the waveforms and design equations for achieving the ZVS/ZDS conditions in the class-E power amplifier, taking into account the gate-to-drain parasitic capacitance of the MOSFET. We also give a design example along with PSpice simulation and experimental results. The voltage waveforms obtained from both the PSpice simulation and the circuit experiment...
This paper presents a new approach to MOSFET modeling using a state-space technique. The model is based on discrete elements whose values are extracted from measurements, datasheet parameters and SPICE?? equations. The switching characteristics of the component are strongly determined by the gate-drain capacitance (CGD). With help of thorough impedance measurements, characterization of this capacitance...
Nowadays, manufacturers of power management integrated circuits (PMICs) are producing devices that integrate many of the functional blocks required in power supplies in single tiny chips. This paper highlights the circuit design considerations as a part of highly integrated, high switching frequency (few MHz range) PMICs optimized to be fabricated using CMOS fabrication technologies. Moreover, the...
The International Technology Roadmap for Semiconductors (ITRS) projected value for the High Performance (HP) MOSFET channel length is 10 nm at the year 2016. The FinFET is expected to replace the conventional bulk MOSFET beyond the 22 nm node due to the latter's scaling challenges. In this article the design optimization of a 10 nm FinFET is considered. It is shown that the ITRS requirements for the...
The paper presents a detailed study on the idle leakage reduction techniques on partially depleted silicon-on-insulator (PD-SOI) CMOS SRAM. The most promising leakage reduction techniques that have been proposed are introduced, analyzed and compared into 65 nm low-power PD-SOI technology, taking into account all the SOI specific effect. Especially, it is shown that the leakage reduction techniques...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
With the trend to higher switching speed for IGBTs, the dynamics of the MOS part have increasing impact on device characteristics. In addition, the base-charge distribution of the BJT part has also to be modeled quite accurately to capture the IGBT's overall dynamic behavior adequately. We present a new IGBT model for circuit simulation, where all controlling potentials in the base region are calculated...
Emission spectroscopy of plasma-excited chemical species is widely used for generalized chemical analyses in bench-top systems. This paper explores the use of pulsed microdischarges between two and three electrode microstructures, which operate in air at atmospheric pressure, for use in handheld chemical analyzers. Pulsed microdischarges are fired between two-electrodes spaced apart by 0.2-2 mm. Synchronized...
A new Non-Quasi-Static (NQS) model of SOI-MOSFETs is presented in this paper. This model, based on the charge sheet approach, is valid for all regions of operation. Excellent agreement is found with 2D device simulations both under static and fast transient conditions. This new model proves to be useful to simulate analog circuits where NQS phenomena have a first order effect on circuit performance.
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