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The reliability and optical performance of an LED are dependent on its junction temperature. In this paper, the surface temperature of a chip level conversion LED package was measured using thermoreflectance thermography. The junction-ambient thermal resistance of the same LED device was measured using a thermal transient tester and the junction temperature subsequently calculated from this. Good...
The reliability and optical performance of an LED are dependent on its junction temperature. In this paper, the surface temperature of a chip level conversion LED package was measured using thermoreflectance thermography. The junction-ambient thermal resistance of the same LED device was measured using a thermal transient tester and the junction temperature subsequently calculated from this. Good...
Low thermal resistance GaN-on-diamond wafers offer enhanced thermal management with respect to GaN-on-SiC devices. The GaN/diamond interfacial thermal resistance can contribute significantly to the total device thermal resistance and must therefore be minimized to gain the maximum benefit from GaN-on-diamond. A contactless thermoreflectance measurement technique has been developed, which can be used...
The primary purpose of this work was to investigate the relative heat removal effectiveness of various thermal interface and buried oxide materials as they would be used in actual conditions. The thermoreflectance thermography approach was used to measure, non-invasively and with submicron spatial resolution, the surface temperature fields of two types of thermal test devices: (i) Delphi thermal test...
We report the thickness and phase dependent thermal properties of Ge2Sb2Te5 (GST) films using electrical Joule heating thermometry (3ω method) and validate the data with optical thermometry. The intrinsic thermal conductivity of GST increases from 0.26 W/mK for the amorphous phase to 0.57 W/mK for the crystalline phase. The thermal boundary resistance between GST and Si3N4 films decreases from 134...
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