The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on the Landau–Khalatnikov equation coupled to the standard BSIM6 MOSFET model and implemented in Verilog-A. It includes transient and temperature effects, and accurately captures different aspects of NCFET...
An insulated gate bipolar transistor (IGBT) physical model with field stop cell structure is presented in this paper. The extraction method for all parameters is also given here. The parameters are extracted for Fuji Electric 1.7kV/300A IGBT (2MBI300VN-170-50). The accuracy of the model is verified by experiments.
This paper presents a kind of HVIGBT transient mixture model and corresponding parameter extraction method. The HVIGBT model can divide into MOSFET and BJT two parts. The two models are formed respectively according to HVIGBT work principle, in addition, the carrier transport equations have been simplified for avoiding Kirk effect in BJT model. The transient model is realized in PSIM software in the...
This paper presents a new behavioral macromodeling approach for high-speed digital output buffers/drivers. Unlike traditional behavioral black-box modeling techniques, our approach consists of modeling digital drivers based on their physical constitution in order to simplify the complexity of the nonlinear parametric relationship and include the package network within the nonlinear model structure...
This paper describes a comparative analysis between two topologies of operational amplifiers to design a 40 MS/s 12-bit pipeline analog to digital converter (ADC). The analysis includes AC and transient simulation to select the proper topology. This ADC is implemented in a 0.35 mum AMS CMOS technology with 3.3 V single power supply. The capacitors and selected operational amplifiers were scaled for...
A novel methodology for accurate and efficient static timing analysis is presented in this paper. The methodology is based on finding a frequency domain model for the gates which allows uniform treatment of the gates and interconnects. It is shown that despite the highly nonlinear overall gate model, a frequency domain model of the gate with the model parameters, gate moments, as functions of the...
This paper presents an analytical modeling of ballistic and quasi-ballistic transport, implemented in Verilog-A environment and used for circuit simulation. Our model is based on the Lundstrompsilas approach and uses an expression of the backscattering coefficient given by the flux method. The model takes also into account short channel effects and tales into account the effects of different scattering...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.