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We report on AlGaN/GaN high electron mobility transistors (HEMTs) for high-power operation achieved by selective-area growth (SAG) technique based on plasma-assisted molecular beam epitaxy (PAMBE). Significant improvements in current density and on-state resistance were observed when SAG was employed. Maximum current of 1.75A and on-state resistance of 4.76mΩ cm2 were demonstrated for a large-periphery...
We have experimentally investigated the trade-offs involved in thinning down the channel of III-V FETs with the ultimate goal of enhancing the electrostatic integrity and scalability of these devices. To do so, we have fabricated InAs HEMTs with a channel thickness of tch = 5 nm and we have compared them against, InAs HEMTs with tch = 10 nm. The fabricated thin-channel devices exhibit outstanding...
This paper reports a novel method for producing low ohmic contact resistance, RC, as well as low sheet resistance, Rsh, on AlN/GaN MOS-HEMT structures. The method relies on the protection of the very sensitive AlN epi-layer from exposure to liquid chemicals during processing using evaporated Al, which on thermal oxidation forms Al2O3. The Al2O3 acts as a surface passivant and as a gate dielectric...
In this paper, we present a novel self-aligned process for future III-V logic FETs. Using this process, we have demonstrated enhancement-mode 90-nm-gate-length InGaAs HEMTs with excellent logic figures of merit. We have carried out a detailed analysis of this device architecture to determine its future scaling capabilities. We find that, as the insulator is scaled to achieve enhancement mode, the...
The performance of AlGaN/GaN high electron mobility transistors (HEMTs) with an AlxSi??Nz passivation is reported for the first time. Thin films (30 nm) of AlxSi??Nz and Si??Nz were used to passivate devices (fabricated side-by-side) and their performance was compared in both small signal and large signal measurement environments. Examination of MIS structures with each dielectric by capacitance-voltage...
The DC properties of 110-nm gate-length InAs/AlSb-based HEMTs at cryogenic (30 K) and room temperature (300 K) have been investigated. Compared to 300K, devices at 30 K exhibited lower on-resistance (RON) and output conductance (gDS), a higher transconductance (gm) and a more distinct knee in the IDS(VDS) characteristics. The improvement in the DC performance at cryogenic temperature should mainly...
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