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We present the development of a high-k first n-channel InGaAs metal-oxide-semiconductor field effect transistors (MOSFETs) and the effect of annealing on the source/drain (S/D) sheet resistance (Rs) and the high-k gate oxide. Test structures based on the transfer length method (TLM) were used as part of a design of experiment (DOE) to optimize the S/D implant activation process. The optimized process...
In0.53Ga0.47As has become a material of interest for the continuation of Moore's Law because of its high bulk electron mobility compared to Si. One problem associated with small effective-mass semiconductors such as InGaAs is the density-of-states bottleneck, or the loss of gate-capacitance due to the low density-of-states in the conduction band. The delta-doping profile is one way to reduce the effective...
N-type InGaAs MOS devices are fabricated using HfO2/TaN and HfAlO/TaN gate stacks. Both direct deposition and novel in-situ plasma PH3 surface passivation are compared. The PH3-passivated MOS capacitances shows high performance with EOT=1.7~3.0 nm, Jg=2times10-5 A/cm2 at Vg=2 V. After RTA, gate stack maintains stable with excellent C-V frequency dispersion of 1.3%. Silicon implanted InGaAs achieves...
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