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We have investigated the scaling properties of [111] InAs nanowire MOSFETs in the ballistic limit. The nanowire band structure has been calculated with an sp3d5 s* tight-binding model for nanowire diameters between 2 and 25 nm. Both the effective band gap and the effective masses increase with confinement. Using the atomistic dispersion relations, the ballistic currents and corresponding capacitances...
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