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In this paper we carry out study of the Field Plate (FP) effects on AlGaN/GaN HEMTs (high electron mobility transistors) by modeling the electric field in the structure FP-HEMT (with Field Plate). It consist to analyze the maximum of the electric field according to the gate voltage and drain voltage taking into account several technological parameters of the Field Plate such as the passivation layer...
An analytical approach for calculating the electric field and designing field plates (FP) for reducing the peak electric field in the channel and at the surface of high electron mobility transistors (HEMTs) for a given gate and drain voltage is presented in this paper. The difference caused by the field plate is better demonstrated by the electrical field distribution in the channel. A 50% reduction...
An n-channel In0.65Ga0.35As LDMOS with Al2O3 as gate dielectric is proposed. Power device parameters such as specific on-resistance, gate charge, and breakdown voltage are examined using two-dimensional device simulation. Comparison between In0.65Ga0.35As Si devices is made. The InGaAs LDMOS shows a 92% improvement in Ron ?? Qg over its silicon counterpart.
In this paper, GaN-based MIS-HFET devices on 4-inch Si substrates were fabricated, and the device characteristics were examined. As a result, the breakdown voltage was improved to be over 2.45 kV using high-resistive carbon doped buffer layers with a larger thickness of over 7.3 mum. The maximum drain current was estimated to be over 115 A using MIS-structures. A trade-off between the specific on-resistance...
The results of the influence of GaAs MESFET geometry on the transistor parameters have been presented. The self-aligned ion implantation process with the multilayer SiO2 ldquodummy gaterdquo for the transistors fabrication was used. The dependences of the breakdown voltage and drain-source current of the fabricated GaAs MESFET versus the gap between the gate and n+ drain region were plotted. The optimal...
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