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We report on the demonstration of enhancement-mode n-channel GaN-based hybrid MOS-HFETs realized on AlGaN/GaN heterostructure on silicon substrates with a large drain current operation. The GaN-based hybrid MOS HFETs realized the threshold voltage of 2.8 V, the maximum drain current of over 70 A with the channel width of 340 mm. This is the best value for an enhancement-mode GaN-based FET. The specific...
This letter reports normally-off operation of an AlGaN/GaN recessed MIS-gate heterostructure field-effect transistor with a high threshold voltage. The GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows us to achieve the high threshold voltage, whereas the low on-state resistance is maintained by the 2-D electron gas remaining in the channel...
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