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The Silicon Photomultiplier (SiPM) is a promising kind of device able to handle single photons thus permitting the measurement of weak optical signals. The design of a highperformance front-end electronics for the read-out, requires an accurate electrical model of the SiPM. A reliable model was developed in the past but the parameter extraction procedure is rather cumbersome and requires several measurement...
Vertical MOSFETs device have one important disadvantage, which is higher overlap capacitances such as the separated gate-source and gate-drain parasitic capacitances (CGSO and CGDO), which is known to be most crucial to the high-frequency/speed performance but very hard to extract. In this paper presents parameter extraction techniques to create an extended BSIM model card of vertical p-MOSFETs for...
The aim of this paper to investigate the possible simplified equivalent circuits for resistors and capacitors made of poly layers in integrated circuits. Compromise has to be done when choosing device model regarding model accuracy and model complexity. This paper tries to find appropriate device models together with their limits.
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