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For advanced fabrication technology nodes, novel single-event related failures are being observed. This paper details efforts to use 3D TCAD simulations to model these failure mechanisms and develop mitigation techniques for flip-flop designs. Simulation, as well as experimental, results are used to show validity of such an approach for future CMOS technologies.
The scaling of CMOS technology intensifies the interaction between design and process at 45nm or below, causing strong layout-dependent proximity effects. Photolithography, strain silicon engineering, and ion implantation are the primary causes of those effects, whose impacts to design can be mitigated via restrictive design rules and accurate modeling. A novel approach is proposed that seamlessly...
This paper describes a design flow for the circuit-level optimization of a technology. The concurrent exploration of device characteristics and library design choices leads to a more application-optimal technology. We illustrate the design flow by: 1) analyzing the impact of buffer cell design, and 2) by optimizing a 130 nm technology for low operational power.
Novel 3D stacked gate-all-around multichannel CMOS architectures were developed to propose low leakage solutions and new design opportunities for sub-32 nm nodes. Those architectures offer specific advantages compared to other planar or non planar CMOS devices. In particular, ultra-low IOFF (< 20 pA/mum) and high ION (> 2.2 mA/mum) were demonstrated. Moreover, those transistors do not suffer...
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