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DSRDs are fast HV opening switching devices. Traditionally, these deep junction devices are fabricated on silicon wafers by deep diffusion. We present DSRD results based on silicon epitaxial layers with as-grown junctions. Static measurements showed a rectifying behavior with leakage currents proportional to device dimension. Pulsed power measurements showed that the switching rate was dependant on...
In this paper the effect of Al-metal-thickness variations on the IC metal lifetime is investigated. Because the flow of currents in IC metals is mainly dictated by the front-end circuitry, metal thickness variations result in current-density changes in the IC metals. The change of current density, in turn, results in metal lifetime variations caused by Electromigration (EM). This effect is investigated...
This paper describes an accurate method to discretize the Dirichlet-to-Neumann boundary operator for a convex polygonal conductor. The technique is based on an expansion of the boundary value of the current density. Because the corresponding expansion functions exhibit the exact current behavior inside the conductor, they ensure a very good accuracy up to skin effect frequencies. In combination with...
One dimensional ZnO nanostructures prepared by low temperature solution-phase methods have been investigated for a number of potential applications. In these applications, they take an important function as charge transport path in the devices. Thus, the electrical conductivity, carrier mobility and ZnO-substrate junction are crucial for device performance. One comment way for this purpose is to dope...
Electromigration results are described for a dual damascene structure with copper metallization and a low-k dielectric material. The failure times follow a bimodal lognormal behavior with early and late failures. Moreover, there is evidence of a threshold failure time such that each failure mode is represented by a 3-parameter lognormal distribution. It is found that the threshold failure time scales...
The simulation results show that larger contact opening may not benefit on relieving current crowding effect in the flip-chip solder joints. For the solder joints with a 10-mum thick Cu UBM, the diameter of the contact opening for the lowest current crowding effect is 60 mum. It means that using larger or smaller diameter will increase the current density in the solder bumps. In addition, the optima...
Excessive supply voltage drops in a circuit may lead to significant circuit performance degradation and even malfunction. To handle this problem, existing power delivery aware placement algorithms model voltage drops as an optimization objective. We observe that directly minimizing voltage drops in an objective function might not resolve voltage-drop violations and might even cause problems in power-integrity...
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