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Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency...
An exact design method of circuit power loss is developed. The method is useful for designing high power density converters utilizing Si-IGBT/SiC-Shottky-barrier-diode (SiC-SBD) or high voltage Si-IEGT/SiC-PiN-diode hybrid pairs. For the exact power loss calculation, an empirical method to extract device model parameters is introduced. The calculation results of the power loss are compared with experimental...
While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the alpha-power law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockleypsilas square model. In this paper, we describe a 6-b 100 MSPS CMOS current steering digital-to-analog converter (DAC) with the alpha-power...
The article deals with the design of a 3-bit flash AD converter using switched current technique, particular sub-circuits are discussed. Described converter is determined as a part of a multi-bit sigma delta modulator. Due to this fact the converter consists of current comparators net. Even if switched current technique is used, output of the converter is voltage.
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