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This study describes a simple and efficient method for depositing of highly ordered and aligned Zinc Oxide (ZnO) film as the semiconducting channel layer for use in a transparent thin-film transistor (TFT) on a silicon and flexible polyimide (PI) substrate. The effect of an oxygen (O2) plasma power of 18 W followed by low temperature (∼approximately 150 °C) annealing on a hot plate was evaluated,...
We demonstrate the simultaneous growth of multiple optically functional crystalline structures through a complex implantation and diffusion process. This includes ZnTe, ZnO and as-yet undefined silica crystallites doped with Er3+ or Tm3+ which are each characterized optically and structurally.
Optimized transparent conductive oxide front electrodes are vital to further increase the efficiency of thin-film silicon solar devices. We report details on the fabrication of multiscale textured zinc oxide substrates and their implementation in amorphous silicon/microcrystalline silicon tandem (micromorph) devices. Such substrates allow separate optimization of light trapping in the top and bottom...
Low pressure apparatus combining N2O plasma, DEZn transported in argon and UV irradiation of the deposition zone has been used. ZnO layers were deposited on Si (100) and GaP (111) substrates. Best quality layers were deposited on Si substrates. Growth rate was changed in the range 2 to 90 μm/hour. Surface morphology at smaller growth rate was regular nanowalls type on both Si and GaP substrates. More...
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