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Geometrical transition to three dimensional (3D) or Si nanowire (SNW) MOSFETs imposes critical issues regarding process technologies. High energy ion bombardment damage in 3D MOSFETs has been considered inevitable because of the fundamental nature of plasma process. In this study, we further investigated plasma-induced physical damage (PPD) on Si substrates with different surface orientations — (100),...
Physical damages to Si substrate induced by energetic ions from plasma, associated with Si recess, is studied. By using molecular dynamics (MD) simulation, we clarified the structural picture of the damage. By spectroscopic ellipsometry (SE) measurements, we experimentally analyzed damaged layer thickness and energy band structure. Comprehensive analysis of the damage suggests device performance degradation...
In this work we report the formation of silicon nitride films on silicon substrates by N2 Electron Cyclotron Resonance plasma nitridation. An absorption band located around 860-890 cm-1 was observed in the infrared spectra, which is slightly above the wave number of the characteristic silicon nitride band. According to ellipsometry measurements performed at lambda= 532 nm, the thickness of the films...
Plasma-exposed Si surface related to Si recess in source/drain region was investigated in detail for various superposed bias configurations with frequencies of 13.56 MHz and 400 kHz. Two different bias powers were utilized by an inductively coupled plasma reactor (ICP). The surface layer (SL) and the interfacial layer between the SL and Si substrate (IL) were analyzed by spectroscopic ellipsometry...
Pt-Fe, Pt-Co and Pt-NiCo alloys and multilayer films were prepared on a SiO2 substrate by the dc magnetron sputtering technique. The reflectivity spectra and magnetooptical Kerr spectra of these specimens were measured, and the diagonal and off-diagonal elements of the conductivity tensor were deduced. The results of this work are as follows: (1) The peak energy position of the magnetooptical Kerr...
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