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Ga2-2xIn2xO3 films with different indium content x [In/(Ga+In) atomic ratio] have been prepared on α-Al2O3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The preparation, structural and photoluminescence (PL) properties of the Ga2-2xIn2xO3 films were investigated. The XRD analysis revealed that the film with high Ga content exhibited monoclinic structure of Ga2O3 and...
ZnO films and their Er-doped films oriented in c-axis were prepared on silicon substrate (100) by frequency magnetron sputtering method, and they were taken in heat treatment. Then, the influences on the surface morphologies and crystal structures of the film samples, which were made by the different annealing temperatures and doping concentrations, were analyzed through observing the treatment of...
The stability of transparent conducting oxide (TCO) films with bi-layered structures has been tested in air at temperatures up to 550??C. Aluminum-doped ZnO and Sn-doped In2O3 (AZO/ITO) transparent conducting oxide (TCO) films were deposited on glass substrates by a home made radio-frequency (RF) magnetron sputtering system at room temperature in pure argon ambient. A typical commercial ITO and AZO...
Textured Ga doped ZnO (GZO) films showing strong light trapping ability were prepared at room temperature. Rapid thermal annealing of the textured-GZO films at elevated temperatures was found to be effective to significantly improve their optical transmission without deteriorating the film conductivity. By applying the annealed GZO films to the microcrystalline Si1-xGex (x=0.1) single junction solar...
The characteristics of gallium nitride (GaN) films growth on gallium arsenide (GaAs) and sapphire (Al2O3) by Metal-organic vapor phase epitaxy (MOVPE) system are presented. Comparing the results we can saw the advantages and disadvantages of use one or other substrate in order to find the best experimental conditions for obtain c-GaN films with good properties.
ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The electrical properties...
The effect of the ZnO homo-buffer layer on the structural, optical and electrical properties of the Sol-gel ZnO films was systematically investigated. The XRD and SEM results show that the homo-buffer layer can improve the degree of the preferential c-axis orientation (the best Lotering orientation factor (F) can reach 0.915), the grain size and the surface morphology of thereon ZnO films. A narrower...
Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.
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