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A simple, fast, and reliable characterization of thermal properties method to determine junction temperature (Tj) in high power GaN-based light emitting diodes (LED) was presented in this study. Thermal characteristics of high power light-emitting-diode have been analyzed by using a three-dimensional thermal conduction model. Maximum operation temperature has also been calculated. The induced thermal...
Undesired residual strain always exists in the epitaxial film inevitably as a result of lattice mismatch and thermal expansion mismatch between the substrate and the epitaxial film. The strain affects crystalline quality as well as optical and electrical properties of LED epitaxial film. In this paper, we report on the effects of strain on the emission properties of III-nitrides based LEDs grown on...
A-plane n-GaN film has been grown on r-plane sapphire substrate by MOCVD with flow-rate modulation (FME). Under the used growth conditions, the optimized FME parameters include the on/off periods at 60/80 s. With the FME technique, the n-GaN film has a high Hall mobility of 779 cm2/V-s.
In this study we manufacture AZO transparent thin films with E-gun evaporator and change the flow rate of oxygen to find which parameter can fabricate the best quality AZO thin films. After analyze the material characteristics of AZO thin films we fabricated. We can acquire the best parameter is heating the substrate to 150??C and without oxygen flow. With this parameter, we can obtain AZO thin film...
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